| PART |
Description |
Maker |
| D1209UK D1209 |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-400MHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-400MHz,推挽)
|
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| KF410BV KF414BS KF518BV KF402BS KF402BV KF406BS KF |
SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)
400MHz-500MHz Band(150ohm)
SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE) 规格声表滤波器（带通滤波器00MHz520MHz的范围）
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| D2007UK D2007 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| M68749 68749 |
RF POWER MODULE 380-400MHz, 12.5V, 5W, DIGITAL MOBILE RADIO
From old datasheet system
380-400MHz / 12.5V / 5W / DIGITAL MOBILE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EM47EM0888SBA-125E EM47EM0888SBA-150 EM47EM0888SBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM47EM3288SBA EM47EM3288SBA-125 EM47EM3288SBA-150 |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM47FM0888MBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| MT8815 |
8 x 12 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
| 2SK3325 |
Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| MAX2680 MAX2680EUT-T MAX2680-MAX2682 MAX2681 MAX26 |
Monostable multivibrator with Schmitt-trigger inputs 14-SO 0 to 70
400MHz to 2.5GHz, Low-Noise, SiGe Downconverter Mixers
400MHz to 2.5GHz / Low-Noise / SiGe Downconverter Mixers
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| 2SK3456 |
N-Channel MOSFET
Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
